rev.4.00, may 26, 2006, page 1 of 6 RQJ0303PGDQA silicon p channel mos fet power switching rej03g1272-0400 rev.4.00 may 26, 2006 features ? low on-resistance r ds(on) = 54 m ? typ (v gs = ?10 v, i d = ?1.6 a) ? low drive current ? high speed switching ? 4.5 v gate drive outline renesas package code: plsp0003zb-a (package name: mpak) 1. source 2. gate 3. drain s d g 2 2 1 1 3 3 note: marking is ?pg?. absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss ?30 v gate to source voltage v gss +10 / ?20 v drain current i d ?3.3 a drain peak current i d(pulse) note1 ?5 a body - drain diode reverse drain current i dr ?3.3 a channel dissipation pch note2 0.8 w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. when using the glass epoxy board (fr-4: 40 40 1 mm)
RQJ0303PGDQA rev.4.00, may 26, 2006, page 2 of 6 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss ?30 ? ? v i d = ?10 ma, v gs = 0 gate to source breakdown voltage v (br)gss +10 ? ? v i g = +100 a, v ds = 0 gate to source breakdown voltage v (br)gss ?20 ? ? v i g = ?100 a, v ds = 0 gate to source leak current i gss ? ? +10 a v gs = +8 v, v ds = 0 gate to source leak current i gss ? ? ?10 a v gs = ?16 v, v ds = 0 drain to source leak current i dss ? ? ?1 a v ds = ?30 v, v gs = 0 gate to source cutoff voltage v gs(off) ?1.0 ? ?2.0 v v ds = ?10 v, i d = ?1 ma r ds(on) ? 54 68 m ? i d = ?1.6 a, v gs = ?10 v note3 drain to source on state resistance r ds(on) ? 76 107 m ? i d = ?1.6 a, v gs = ?4.5 v note3 forward transfer admittance |y fs | 2.5 4.2 ? s i d = ?1.6 a, v ds = ?10 v note3 input capacitance ciss ? 625 ? pf output capacitance coss ? 111 ? pf reverse transfer capacitance crss ? 83 ? pf v ds = ?10 v, v gs = 0, f = 1 mhz turn - on delay time t d(on) ? 18 ? ns rise time t r ? 29 ? ns turn - off delay time t d(off) ? 47 ? ns fall time t f ? 5.7 ? ns i d = ?1 a, v gs = ?10 v, r l = 6.6 ? , rg = 4.7 ? total gate charge qg ? 12 ? nc gate to source charge qgs ? 1.5 ? nc gate to drain charge qgd ? 2.9 ? nc v dd = ?10 v, v gs = ?10 v, i d = ?3.3a body - drain diode forward voltage v df ? ?0.9 ? v i f = ?1.5 a, v gs = 0 note3 notes: 3. pulse test
RQJ0303PGDQA rev.4.00, may 26, 2006, page 3 of 6 main characteristics 0 0.4 0.2 0.6 1.0 0.8 1.2 0 25 50 75 100 125 150 ? 2.4 v ?2.3 v ? 2.2 v ? 2.1 v ? 1.9 v v gs = 0 v ?1.0 ?5 ?0.8 ?4 ?0.6 ?3 ?0.4 ?2 ?0.2 ?1 0 0 ? 3 v 0 ?0.2 ?0.4 ?0.6 ?0.8 ?1.0 0 ?0.5 ?1 ?1.5 ?2 ?2.5 ?0.0001 ?0.001 ?0.01 ?0.1 ?1 ?1.5 0 ?0.5 ?2 ?2.5 ?3 ?1.0 ?1.5 ?0.5 ?2.0 0 ?25 0 25 50 75 100 125 150 pulse test tc = 25 c v ds = ?10 v pulse test ? 2.5 v ?25 c tc = 75 c v ds = ?10 v pulse test i d = ?10 ma ?1 ma ?0.1 ma ? 2 v tc = 75 c 25 c ?25 c v ds = ?10 v pulse test 25 c ? 4 to ? 10 v ambient temperature ta ( c) *when using the glass epoxy board (fr-4: 40 40 1 mm) channel dissipation pch (w) maximum channel power dissipation curve maximum safe operation area drain to source voltage v ds (v) drain current i d (a) drain current i d (a) typical output characteristics drain to source voltage v ds (v) typical transfer characteristics (1) gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics (2) gate to source voltage v gs (v) drain current i d (a) gate to source cutoff voltage vs. case temperature case temperature tc ( c) gate to source cutoff voltage v gs(off) (v) ?0.01 ?0.1 ?1 ?10 ?0.1 ?1 ?10 ?100 ?0.01 ?100 dc operation tc = 25 c pw = 10 ms 1 ms 100 s operation in this area is limited by r ds(on)
RQJ0303PGDQA rev.4.00, may 26, 2006, page 4 of 6 0 ?0.1 ?0.2 ?0.3 0 ?4 ?8 ?12 ?16 ?20 0.01 0.03 0.1 0.3 1.0 ?0.1 ?1 ?0.3 ?3 ?10 ?25 0 25 50 75 100 125 150 ?25 0 25 50 75 100 125 150 0.1 1 10 ? 0.1 ? 0.3 ? 1 ? 10000 ? 1 ? 10 ? 100 ? 1000 ?25 0 25 50 75 100 125 150 50 60 70 80 90 100 110 120 ?0.5 a i d = ?1 a pulse test v gs = ?4.5 v 40 50 60 70 80 90 i d = ?1 a pulse test v gs = ?10 v ?0.5 a ?0.2 a pulse test tc = 25 c ?0.5 a ?1.0 a ?0.2 a pulse test v gs = 0 v v ds = ?3 0 v pulse test v ds = ?10 v ?25 c 25 c tc = 75 c v ds = -4.5 v ?10 v ?0.2 a pulse test tc = 25 c drain to source saturation voltage vs. gate to source voltage gate to source voltage v gs (v) drain to source saturation voltage v ds(on) (v) static drain to source on state resistance vs. drain current drain current i d (a) drain to source on state resistance r ds(on) ( ? ) static drain to source on state resistance vs. case temperature case temperature tc ( c) drain to source on state resistance r ds(on) (m ? ) static drain to source on state resistance vs. case temperature case temperature tc ( c) drain to source on state resistance r ds(on) (m ? ) forward transfer admittance vs. drain current drain current i d (a) forward transfer admittance |y fs | (s) zero gate voltage drain current vs. case temperature case temperature tc ( c) zero gate voltage drain current i dss (na)
RQJ0303PGDQA rev.4.00, may 26, 2006, page 5 of 6 04 8 12 16 0 ?20 ?40 ?80 ?60 0 ?4 ?8 ?12 ?16 0 ?10 ?20 ?30 10 100 1000 10000 800 850 900 950 1000 1050 ?10 ?5 0 5 10 v ds = 0 v f = 1 mhz 0 ?0.8 ?0.4 ?1.2 ?1.6 ?2.0 ?0.6 ?1.0 ?0.8 ?0.4 ?0.2 0 ?0.3 ?0.4 ?0.5 ?0.8 ?0.6 ?0.7 ?0.9 25 50 75 100 125 150 i d = ?3.3 a tc = 25c ?10 v v dd = ?25 v ?10 v v dd = ?25 v v ds v gs 0 v pulse test tc = 25c v gs = ?10 v ?5 v ?1 ma i d = ?10 ma v gs = 0 20 ciss coss crss v gs = 5 v ?100 ?20 v gs = 0 v f = 1 mhz drain to source voltage v ds (v) dynamic input characteristics gate charge qg (nc) gate to source voltage v gs (v) switching characteristics switching time t (ns) typical capacitance vs. drain to source voltage drain to source voltage v ds (v) ciss, coss, crss (pf) input capacitance vs. gate to source voltage gate to source voltage v gs (v) ciss (pf) reverse drain current i dr (a) reverse drain current vs. source to drain voltage source to drain voltage v sd (v) body-drain diode forward voltage vs. case temperature case temperature tc ( c) body-drain diode forward voltage v sdf (v) drain current i d (a) 1 10 100 1000 ?0.01 ?0.1 ?1 ?10 v dd = -10 v v gs = -10 v rg = 4.7 ? p w = 5 s tc = 25c t d(on) t d(off) t f t r
RQJ0303PGDQA rev.4.00, may 26, 2006, page 6 of 6 package dimensions d e a aa b xsa m e h e a a 2 a 1 s b a-a section b 1 c 1 c qc l l 1 l p a 3 pattern of terminal position areas i 1 b 2 e e 1 a a 1 a 2 a 3 b b 1 c c 1 d e e h e l l 1 l p x b 2 e 1 i 1 q 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 min nom dimension in millimeters reference symbol max 1.1 0.25 0.42 0.4 0.13 0.11 1.5 0.95 2.8 1.95 0.3 1.3 0.1 1.2 0.5 0.15 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.05 sc-59a plsp0003zb-a mpak(t) / mpak(t)v 0.011g mass[typ.] renesas code jeita package code previous code package name mpak ordering information part name quantity shipping container RQJ0303PGDQAtl-e 3000 pcs. 178 mm reel, 8 mm emboss taping
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